Intermixing characteristics of strained-InGaAs/InGaAsP multiple quantum well structure using impurity-free vacancy diffusion

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 11 B, 1999, Pages

  Park, Jung Woo ^a   Kim, Hyun Soo ^b   Kim, Jung Soo ^c   Oh, Dae Kon ^c   Oh, Kwang Ryong ^c   Yeo, Duk Ho ^a   Kim, Sung June ^a  

^a Seoul National University   (South Korea)

^b Korea University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTEGRATED OPTOELECTRONICS; INTERDIFFUSION (SOLIDS); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

IMPURITY-FREE VACANCY DIFFUSION (IFVD); INDIUM GALLIUM ARSENIC PHOSPHIDE; PHOTONIC INTEGRATED CIRCUITS (PIC);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033354140     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1303     Document Type: Article

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