Characteristics of intermixed InGaAs/InGaAsP multi-quantum-well structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1032-1034

  Yeo, Deok Ho ^a   Yoon, Kyung Hun ^a   Kim, Sung June ^a  

^a Seoul National University   (South Korea)

Author keywords

InGaAs InGaAsP multi quantum well; Optical waveguide; Photoluminescence; Quantum well intermixing; Secondary ion mass spectroscopy

Indexed keywords

DEPOSITION; DIELECTRIC FILMS; ENERGY GAP; HEAT TREATMENT; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

PROPAGATION LOSS; QUANTUM WELL INTERMIXING; SEMICONDUCTING INDIUM GALLIUM ARSENIC PHOSPHIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033751761     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1032     Document Type: Article

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