Performance of Ku-band on-chip matched Si monolithic amplifiers using 0.18-μm-Gatelength MOSFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 6 I, 2001, Pages 1086-1093

  Yano, Hitoshi ^a   Nakahara, Yasushi ^a   Hirayama, Tomohisa ^a   Matsuno, Noriaki ^a   Suzuki, Yasuyuki ^a   Furukawa, Akio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Amplifier; CMOS LSI; Dielectric quasi TEM mode; Ku band; MMIC; On chip matching; Si MOSFET

Indexed keywords

MONOLITHIC AMPLIFIERS;

BANDWIDTH; ELECTRIC INDUCTORS; GAIN CONTROL; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; POLYIMIDES;

MICROWAVE AMPLIFIERS;

EID: 0035369603     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.925495     Document Type: Article

References (18)

1. T. Yamamoto et al., "High-frequency characteristics and its dependence on parasitic components in 0.1 μm Si-MOSFETs," in IEEE VLSI Tech. Symp. Dig., 1996, p. 136.
2. A. Tanabe, M. Soda, Y. Nakahara, T. Tamura, K. Yoshida, and A. Furukawa, "A single chip 2.4Gb/s CMOS optical receiver IC with low substrate crosstalk pre-amplifier," IEEE J. Solid-State Circuits, vol. 33, pp. 2148-2153, Dec. 1998.
3. I. Toyoda, K. Nishikawa, T. Tokumitsu, K. Kamogawa, C. Yamaguchi, M. Hirano, and M. Akikawa, "Three-dimensional masterslice MMIC on Si substrate," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2543-2530, Dec. 1997.
4. N. Suematsu, M. Ono, S. Kubo, Y. Iyama, and O. Ishida, "L-band internally matched Si MMIC front-end," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2375-2378, Dec. 1996.
5. C. Rheinfelder, K. Strohm, F. Beisswanger, J. Gerdes, F. J. Schmuckle, J.-F. Luy, and W. Heinrich, "26 GHz coplanar SiGe MMIC's," in IEEE Microwave Millimeter-Wave Monolithic Circuits Symp. Dig., San Francisco, CA, June 1996, pp. 205-208.
6. Y.-C. Ho, K.-H. Kim, B. A. Floyd, C. W. Yuan Taur, I. Lagado, and K. K. O, "4-and 13-GHz tuned amplifiers implemented in a 0.1 μm CMOS technology on SOI, SOS, and bulk substrates," IEEE J. Solid-State Circuits, vol. 33, pp. 2066-2073, Dec. 1998.
7. A. Higashisaka and T. Mizuta, "20-GHz band monolithic GaAs FET low-noise amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-29, pp. 1-6, Jan. 1981.
8. Y. Nakahara, H. Yano, T. Hirayama, N. Matsuno, Y. Suzuki, and A. Furukawa, "Impact of interconnect capacitance reduction on RF-Si device performance," in IEDM Tech. Dig., 1999, pp. 861-864.
9. H. Yano, Y. Nakahara, T. Hirayama, N. Matsuno, Y. Suzuki, and A. Furukawa, "Ku-band Si MOSFET monolithic amplifiers with low-loss on-chip matching networks," in RF IC Symp. Dig., 1999, pp. 127-130.
10. M. W. Pospieszalski, "Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence," IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1340-1350, Sept. 1989.
11. G. Dambrine, J.-P. Raskin, F. Danneville, D. Vanhoenacker-Janvier, J.-P. Colinge, and A. Cappy, "High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1733-1741, Aug. 1999.
12. H. Hasegawa, M. Furukawa, and H. Yanai, "Properties of microstrip line on Si-SiO system," IEEE Trans. Microwave Theory Tech., vol. MTT-19, pp. 869-881, Nov. 1971.
13. R. Ludwig and P. Bretchko, RF Circuit Design, Theory and Applications. Englewood Cliffs, NJ: Prentice-Hall, 2000, p. 620.
14. M. V. Schneider, "Microstrip lines for microwave integrated circuits," Bell Syst. Tech. J., vol. 48, pp. 1421-1444, May-June 1969.
15. H.-T. Yuan, Y.-T. Lin, and S.-Y. Chiang, IEEE Trans. Electron Devices, vol. ED-29, pp. 639-644, Apr. 1982.
16. H. Hara, "Elementary circuit technology of MOS ULSI's" (in Japanese), in Kindaikagakusya, 1992, p. 224.
17. T. Shibata and E. Sano, "Characterization of MIS structure coplanar transmission lines for investigation of signal propagation in integrated circuits," IEEE Trans. Microwave Theory Tech., vol. 38, pp. 881-890, July 1990.
18. C. A. Liechti, "Performance of dual-gate GaAs MESFET's as gain-controlled low-noise amplifiers and high-speed modulators," IEEE Trans. Microwave Theory Tech., vol. MTT-23, pp. 461-469, June 1975.