High-frequency characteristics and its dependence on parasitic components in 0.1μm Si-MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 136-137

  Yamamoto, Toyoji ^a   Tanabe, Akira ^a   Togo, Mitsuhiro ^a   Furukawa, Akio ^a   Mogami, Tohru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK ANALYZERS; ELECTRON BEAM LITHOGRAPHY; EQUIVALENT CIRCUITS; MICROWAVE CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

COPLANER PROBE HEAD; CUTOFF FREQUENCY; GATE RESISTANCE; JUNCTION CAPACITANCE; LOW RESISTIVITY GATE ELECTRODES; MAXIMUM OSCILLATION FREQUENCY; SHORT CHANNEL EFFECT; TUNGSTEN POLYCIDE ELECTRODE;

MOSFET DEVICES;

EID: 0029723467     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)