Physically based model for low-frequency noise of poly-silicon resistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 89-92

  Brederlow, Ralf ^a   Weber, Werner ^a   Dahl, Claus ^a   Schmitt Landsiedel, Doris ^a   Thewes, Roland ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

POLYSILICON RESISTORS;

RESISTORS;

EID: 0032266920     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)