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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 406-409

Low energy BF2 implantation for the suppression of B penetration

(4) Mineji, A a Hamada, K a Hayashi, T a Saito, S a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; DIFFUSION IN SOLIDS; FLUORINE; GATES (TRANSISTOR); INTERFACES (MATERIALS); ION IMPLANTATION; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE;

GATE OXIDES;

MOS DEVICES;

EID: 0031547638 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(96)00965-2 Document Type: Article

Times cited : (7)

References (10)

1
- 0024896106
- J.M. Sung, C.-Y. Lu, M.L. Chen and S.J. Hillenius, IEDM Technical Digest (1989) 447.
- (1989) IEDM Technical Digest , pp. 447
- Sung, J.M.¹ Lu, C.-Y.² Chen, M.L.³ Hillenius, S.J.⁴

2
- 0025474417
- J.R. Pfiester, F.K. Baker, T.C. Mele, H.-H. Tseng, P.J. Tobin, J.D. Hayden, J.W. Miller, C.D. Gunderson and L.C. Parrillo, IEEE Trans. Electron Devices 37 (1990) 1842.
- (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1842
- Pfiester, J.R.¹ Baker, F.K.² Mele, T.C.³ Tseng, H.-H.⁴ Tobin, P.J.⁵ Hayden, J.D.⁶ Miller, J.W.⁷ Gunderson, C.D.⁸ Parrillo, L.C.⁹

3
- 4143128083
- K. Uwasawa et al., IEDM Technical Digest (1993) 895.
- (1993) IEDM Technical Digest , pp. 895
- Uwasawa, K.¹

4
- 0024013519
- M.C. Ozturk, J.J. Wortman, C.M. Osburn, A. Ajmera, G.A. Rozgonyi, E. Frey, W.-K. Chu and C. Lee, IEEE Trans. Electron Devices 35 (1988) 659.
- (1988) IEEE Trans. Electron Devices , vol.35 , pp. 659
- Ozturk, M.C.¹ Wortman, J.J.² Osburn, C.M.³ Ajmera, A.⁴ Rozgonyi, G.A.⁵ Frey, E.⁶ Chu, W.-K.⁷ Lee, C.⁸

5
- 30244536950
- G.G. Shahidi, J. Warnock, A. Acovic, P. Agnello, C. Blair, T. Bucelot, A. Burghartz, E. Crabbe, J. Cressler, P. Coane, J. Comfort, B. Davari, S. Fischer, E. Ganin, S. Gittleman, J. Keller, L. Jenkins, S. Klaus, K. Kiewtniak, T. Lii, P.A. McFarland, T. Ning, M. Polcari, S. Subbana, J.Y. Sun, D. Sunderland, A.C. Warren and C. Wong, VLSI Symp. Tech Dig. (1990) 93.
- (1990) VLSI Symp. Tech Dig. , pp. 93
- Shahidi, G.G.¹ Warnock, J.² Acovic, A.³ Agnello, P.⁴ Blair, C.⁵ Bucelot, T.⁶ Burghartz, A.⁷ Crabbe, E.⁸ Cressler, J.⁹ Coane, P.¹⁰ Comfort, J.¹¹ Davari, B.¹² Fischer, S.¹³ Ganin, E.¹⁴ Gittleman, S.¹⁵ Keller, J.¹⁶ Jenkins, L.¹⁷ Klaus, S.¹⁸ Kiewtniak, K.¹⁹ Lii, T.²⁰ more..

6
- 30244450282
- B. Davari, E. Ganin, D. Harame and G.A. Sai-Halasz, VLSI Symp. Tech Dig. (1990) 27.
- (1990) VLSI Symp. Tech Dig. , pp. 27
- Davari, B.¹ Ganin, E.² Harame, D.³ Sai-Halasz, G.A.⁴

7
- 84866212857
- Y. Taur, S. Cohen, S. Wind, T. Lii, C. Hsu, D. Quinlan, C. Chang, D. Buchanen, P. Agnello, Y. Mii, C. Reeves, A. Acovic and V. Kesan, IEDM Technical Digest (1992) 901.
- (1992) IEDM Technical Digest , pp. 901
- Taur, Y.¹ Cohen, S.² Wind, S.³ Lii, T.⁴ Hsu, C.⁵ Quinlan, D.⁶ Chang, C.⁷ Buchanen, D.⁸ Agnello, P.⁹ Mii, Y.¹⁰ Reeves, C.¹¹ Acovic, A.¹² Kesan, V.¹³

8
- 0021406605
- G. Baccarani et al., IEEE Trans. Electron Devices 31 (1984) 452.
- (1984) IEEE Trans. Electron Devices , vol.31 , pp. 452
- Baccarani, G.¹

9
- 5544290505
- G. Stingeder et al., Anal. Chem. 314 (1983) 304.
- (1983) Anal. Chem. , vol.314 , pp. 304
- Stingeder, G.¹

10
- 0020900633
- R.G. Wilson, J. Appl. Phys. 54 (1983) 6879.
- (1983) J. Appl. Phys. , vol.54 , pp. 6879
- Wilson, R.G.¹

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