Novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF2-implanted source/drain extension

IEEE Electron Device Letters

Volumn 21, Issue 8, 2000, Pages 381-383

  Chang, Sun Jay ^c   Chang, Chun Yen ^c   Chao, Tien Sheng ^a   Zhong, Sheng Zhen ^c   Yeh, Wen Kuan ^b   Huang, Tiao Yuan ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS;

SACRIFICIAL GATE STACK PROCESSES; SOURCE/DRAIN (S/D) EXTENSION;

MOSFET DEVICES;

EID: 0034245945     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.852957     Document Type: Article

References (10)

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