SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 756-761

Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers

(5) Weiss, E a Klin, O a Benory, E a Kedar, E a Juravel, Y a

a SCD SemiConductor Devices (Israel)

Author keywords

Copper; HgCdTe; Te precipitates

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COPPER; DIFFUSION IN SOLIDS; IMPURITIES; LIQUID PHASE EPITAXY; MERCURY COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING CADMIUM TELLURIDE; SUBSTRATES; TELLURIUM; TRANSMISSION ELECTRON MICROSCOPY;

HOLE CONCENTRATIONS; MERCURY CADMIUM TELLURIDE; VAN-DER-PAUW-HALL METHOD;

THIN FILMS;

EID: 0035360130 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02665868 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.