Numerical simulation of clustering phenomena for point-defects in HgCdTe

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 616-620

  Sugiyama, Iwao ^a   Kajihara, Nobuyuki ^a   Miyamoto, Yoshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Defects; Diffusion; HgCdTe; Random telegraph noise (RTN); Simulation

Indexed keywords

EID: 0001554766     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0204-7     Document Type: Article

References (13)

1. M.C. Chen, S.G. Parker and D.F. Weirauch, J. Appl. Phys. 58, 3150 (1985).
2. B.A. Aronzon, Yu. G. Arapov, M.L. Zvereva, M.S. Nikitin, I.M. Tsidil'kovskii and N.K. Chumakov, Sov. Phys. Semicond. 24, 431 (1990).
3. V.I. Ivanov-Omskii, N.N. Berchenko and A. Elizarov, Phys. Stat. Sol. (a)103, 11 (1987).
4. M.I. Vasilevskiy and E.V. Anda, Semicond. Sci. Technol. 10, 157 (1995).
5. I. Sugiyama, T. Ueda, N. Kajihara and Y. Miyamoto, Inst. Phys. Conf Ser. 144, 340 (1995).
6. A. Tardot, A. Hamoudi, N. Magnea, P. Gentile and J.L. Pautrat, Appl. Phys. Lett. 62, 2548 (1993).
7. J.L. Meléndez and C.B. Helms, J. Electron. Mater. 24, 565 (1995).
8. M.W. Muller, Phys, Rev. B 30, 6196 (1984).
9. P. Parayanthal and F.H. Pollak, Phys. Rev. Lett. 52, 1822 (1984).
10. L.O. Bubulac, J. Cryst. Growth 86, 723 (1988).
11. R. Schiebel, D. Bartholomew, M. Bevan, R.S. List and M. Ohlson, J. Electron. Mater. 24, 1299 (1995).
12. K.T. Chen and H. Wiedemeier, J. Electron. Mater. 24, 405 (1995).
13. H. Wiedemeier and K.T. Chen, J. Electron. Mater. 23, 963 (1994).