Radiative recombination process in InGaN active layers of GaN-based light emitting diodes

Journal of Applied Physics

Volumn 89, Issue 11 I, 2001, Pages 6260-6264

  Zheng, Ruisheng ^a   Taguchi, Tsunemasa ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356171     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367403     Document Type: Article

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