RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation

Vacuum

Volumn 51, Issue 2, 1998, Pages 261-266

  Teichert, J ^a   Voelskow, M ^a   Bischoff, L ^a   Hausmann, S ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; ION IMPLANTATION; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

CHANNELING ANALYSIS; DWELL-TIME EFFECT; FOCUSED ION BEAM IMPLANTATION;

CRYSTALLINE MATERIALS;

EID: 0032183616     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00171-7     Document Type: Article

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