1.95 μm compressively strained InGaAs/InGaAsP quantum well DFB laser with low threshold

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 643-648

  Dong, Jie ^a   Ubukata, Akinori ^a   Matsumoto, Koh ^a  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRIC CURRENTS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

LASER SPECTROSCOPY; THRESHOLD CURRENT;

DISTRIBUTED FEEDBACK LASERS;

EID: 0031348515     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-484-643     Document Type: Conference Paper

References (5)