Electrical characterisation of MNOS devices on p-type 6H-SiC

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 305-308

  Berberich, S ^a   Godignon, P ^a   Millan J ^a   Planson, D ^b   Hartnagel, H L ^c   Senes, A ^d  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITÉ DE LYON   (France)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d SCHNEIDER ELECTRIC   (France)

Author keywords

Interface; MOS; Nitrides; SiC

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; MOS CAPACITORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON CARBIDE; SILICON NITRIDE; SUBSTRATES; VOLTAGE MEASUREMENT;

METAL-NITRIDE SEMICONDUCTOR (MNS) DEVICES; METAL-NITRIDE-OXIDE SEMICONDUCTOR (MNOS) DEVICES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032608056     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00265-9     Document Type: Article

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