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Journal of Crystal Growth

Volumn 172, Issue 3-4, 1997, Pages 381-388

Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x

(2) Jin, Xiaojun a Liang, Junwu a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MASS TRANSFER; MATHEMATICAL MODELS; NUMERICAL METHODS; REACTION KINETICS; SURFACE PHENOMENA; TEMPERATURE; VAPOR PHASE EPITAXY;

CONSERVATION EQUATIONS FOR ENERGY; GERMANIUM SILICIDE; SURFACE KINETICS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0031103264 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00757-9 Document Type: Article

Times cited : (1)

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