Characterization of the CH4/H2/Ar high density plasma etching process for ZnSe

Journal of Electronic Materials

Volumn 30, Issue 5, 2001, Pages 538-542

  Eddy, C R ^a   Leonhardt, D ^a   Shamamian, V A ^a   Butler, J E ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Boston University   (United States)

Author keywords

High density plasma etching; Methane hydrogen; Surface chemistry mechanisms; Zinc selenide

Indexed keywords

ANISOTROPY; COMPOSITION EFFECTS; GASES; IONS; MASS SPECTROMETRY; PLASMA ETCHING; SAMPLING; SURFACE CHEMISTRY; SURFACE STRUCTURE; THERMAL EFFECTS;

HIGH DENSITY PLASMAA ETCHING; ION ENERGY; NEUTRAL FLUXES; PLASMA CHEMISTRIES; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035332456     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0095-y     Document Type: Article

References (22)