AES analysis of plasma-etched ZnSe

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 746-749

  Wirthl, E ^a   Straub, H ^a   Schmid, M ^a   Sitter, H ^a   Bauer, P ^a   Brunthaler, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBIDES; COMPOSITION; COMPOSITION EFFECTS; HYDRIDES; MIXTURES; MOLECULAR BEAM EPITAXY; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

CHEMICAL COMPOSITION; DEPLETION; DEPTH PROFILING; EPILAYERS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562493     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00788-1     Document Type: Article

References (9)

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