Anomalous ion damage behavior in ZnSe

Applied Physics Letters

Volumn 69, Issue 14, 1996, Pages 2062-2064

  Yu, Kin Man ^a   Bourret Courchesne, E D ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3743094554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116880     Document Type: Article

References (28)

1. R. N. Bhargava, J. Cryst. Growth 117, 894 (1992), and references therein.
2. H. Kukimoto, Semicond. Sci. Technol. 6, A14 (1991).
3. Y. S. Park and C. H. Chyng, Appl. Phys. Lett. 18, 99 (1971).
4. B. K. Shin, Y. S. Park, and D. C. Look, Appl. Phys. Lett. 24, 435 (1974).
5. Y. S. Park and B. K. Shin, J. Appl. Phys. 45, 1444 (1974).
6. T. Yodo and K. Yamashita, Appl. Phys. Lett. 53, 2403 (1988).
7. T. Yodo and K. Yamashita, Appl. Phys. Lett. 54, 1778 (1989).
8. K. Akimoto, T. Miyajma, and Y. Mori, Jpn. J. Appl. Phys. 28, L528 (1989).
9. K. Man Yu, J. W. Ager III, E. D. Bourret, J. Walker, and W. Walukiewicz, J. Appl. Phys. 75, 1378 (1994).
10. Edith D. Bourret, Franz X. Zaeh, K. M. Yu. and James M. Walker, J. Cryst. Growth 147, 47 (1995).
11. Ion Implantation and Beam Processing, edited by J. S. Williams and J. M. Poate (Academic. New York, 1984).
12. W. Wesch, Nucl. Instrum. Methods Phys. Res. B 68, 342 (1992).
13. K. Man Yu et al., Mater. Res. Soc. Symp. Proc. 307, 179 (1993).
14. H. M. Naguib and R. Kelly, Radiat. Eff. 25, 1 (1975).
15. K. S. Jones and C. J. Santana, J. Mater. Res. 6, 1048 (1991).
16. M. Gettings and K. G. Stephens, Radiat. Eff. 22, 53 (1974).
17. G. Bahir, T. Bernstein, and R. Kalish, Radiat. Eff. 48, 247 (1980).
18. G. Bahir and R. Kalish, J. Appl. Phys. 54, 3129 (1983).
19. C. Uzan-Saguy, D. Comedi, V. Richter, R. Kalish, and R. Triboulet, J. Vac. Sci. Technol. A 7, 2575 (1989).
20. G. Leo, A. Traverse, M. O. Ruault, and A. V. Drigo, Nucl. Instrum. Methods Phys. Res. B 63, 42 (1992).
21. J. S. Williams, H. H. Tan, R. D. Goldberg, R. A. Brown, and C. Jagadish, Mater. Res. Soc. Symp. Proc. 366, 15 (1994).
22. P. Partyka, R. S. Averback, D. V. Forbes, J. J. Coleman, P. Ehrhart, and W. Jäger, Appl. Phys. Lett. 65, 44 (1994).
23. H. Tan, C. Jagadish, J. S. Williams, J. Zou, D. J. H. Cockayne, and A. Sikorski, J. Appl. Phys. 77, 87 (1995).
24. J. Cullis, P. W. Smith, D. C. Jacobson, and J. M. Poate, J. Appl. Phys. 69, 1279 (1991).
25. L. C. Feldman and J. W. Rogers, J. Appl Phys. 41, 3776 (1970).
26. J. F. Ziegler, J. P. Biersack, and G. Cuomo, TRIM-90 Program, version 5.1.
27. L. C. Feldman, J. W. Mayer, and S. T. Picraux, Materials Analysis by Ion Channeling-Sitbmicron Cyrstallography (Academic, New York, 1982). Chap. 4.
28. H. Kudo, Phys. Rev. B 18, 5995 (1978).