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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 5 A, 2001, Pages

Metalorganic vapor phase epitaxial growth of high-quality AlInN/AlGaN multiple layers on GaN

(8) Kosaki, Masayoshi a Mochizuki, Shingo a Nakamura, Tetsuya a Yukawa, Yohei a Nitta, Shugo a Yamaguchi, Shigeo a Amano, Hiroshi a Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

Author keywords

Al1 xInxN; AlGaN; Interface roughness; MOVPE; Multiple layers; Surface morphology; TEM; X ray satellite peaks

Indexed keywords

FILM GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

INTERFACE ROUGHNESS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035329044 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l420 Document Type: Article

Times cited : (6)

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