Application of excimer-laser annealing to amorphous, poly-crystal and single-crystal silicon thin-film transistors

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 2, 1998, Pages 715-728

  Matsumura, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL GROWTH FROM MELT; EXCIMER LASERS; GRAIN GROWTH; GRAIN SIZE AND SHAPE; LASER APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SINGLE CRYSTALS;

EXCIMER LASER ANNEALING (ELA);

THIN FILM TRANSISTORS;

EID: 0032045842     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199804)166:2<715::AID-PSSA715>3.0.CO;2-L     Document Type: Article

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