Carbon and germanium distributions in Si1-x-yGexCy layers epitaxially grown on Si(001) by RTCVD

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 129-132

  Guedj, C ^a,b   Portier, X ^c   Hairie, A ^c   Bouchier, D ^b   Calvarin, G ^d   Piriou, B ^d  

^a NOKIA RESEARCH CENTER   (United States)

^b CNRS   (France)

^c LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

^d ECOLE CENTRALE PARIS   (France)

Author keywords

Carbon; Chemical vapour deposition; Epitaxy; Germanium; Raman spectroscopy; Silicon; X ray diffrcation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031071169     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09243-7     Document Type: Article

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