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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2769-2774

Bulk and interface deep levels in InGaP/GaAs heterostructures grown by tertiarybutylphosphine-based gas source molecular beam epitaxy

(3) Ishikawa, Fumitaro a Hirama, Atsushi a,b Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

b OKI ELECTRIC INDUSTRY CO (Japan)

Author keywords

CL; Deep level; DLTS; GSMBE; Heterointerface; InGaP; PL; TBP

Indexed keywords

CATHODOLUMINESCENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

HETEROINTERFACES;

HETEROJUNCTIONS;

EID: 0035300650 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2769 Document Type: Article

Times cited : (8)

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