Gas-source molecular beam epitaxial growth of in1-xGaxP on GaAs using tertiarybutylphosphine

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 151-158

  Sai, Hironobu ^a   Fujikura, Hajime ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Alloy composition; Cracking cell; GSMBE; InGaP; PL; TBP

Indexed keywords

ALLOYS; COMPOSITION; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

ALLOY COMPOSITION; CRACKING CELL; GAS SOURCE MOLECULAR BEAM EPITAXIAL GROWTH; TERTIARYBUTYLPHOSPHINE;

MOLECULAR BEAM EPITAXY;

EID: 0032624580     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.151     Document Type: Article

References (5)

1. M. O. Watanabe and Y. Ohba: Appl. Phys. Lett. 50 (1987) 906.
2. J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes and A. E. Kibbler: Appl. Phys. Lett. 55 (1989) 1298.
3. P. M Mooney: J. Appl. Phys. 67 (1990) RI.
4. M. J. Monday and H. Kroemer: IEEE Electron. Device Lett. 6 (1985) 175
5. Y. Ohba, M. Ishikawa, H. Sugawara, M. Yamamoto and T. Nakanisi: J. Cryst. Growth 77 (1986) 374.