Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1541-1546

  Sai, Hironobu ^a   Fujikura, Hajime ^a   Hirama, Atsushi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

GAS SOURCE MOLECULAR BEAM EPITAXY; HALL EFFECT MEASUREMENT; TERTIARYBUTYLPHOSPHINE;

SEMICONDUCTOR GROWTH;

EID: 0033175332     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00101-X     Document Type: Article

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