A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N results

Journal of Synchrotron Radiation

Volumn 8, Issue 2, 2001, Pages 860-862

  Hu, Y F ^a,b   Sham, T K ^b   Zou, Z ^c,d   Xu, G Q ^c   Chan, L ^d   Yates, B W ^a   Bancroft, G M ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Diffusion barrier; Oxidation reaction; Titanium nitride; XANES

Indexed keywords

ARTICLE;

EID: 0035291485     PISSN: 09090495     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0909049500018252     Document Type: Article

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