Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology

Volumn 16, Issue 3, 2001, Pages 155-159

  Sugii, N ^a   Yamaguchi, S ^a   Nakagawa, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

PARASITIC CHANNELS; VALENCE-BANDLEVELS;

MOSFET DEVICES;

EID: 0035280361     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/3/306     Document Type: Article

References (18)