A low redeposition rate high density plasma CVD process for high aspect ratio 175 nm technology and beyond

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 152-154

  Lee, G Y ^a   Ivers, T H ^b   Papasouliotis, G D ^a   Kiewra, E W ^b   Ning, X J ^a   Van Schravendijk, B J ^c  

^a Siemens Microelectronics Inc   (United States)

^b IBM MICROELECTRONICS   (United States)

^c NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DEPOSITION; PLASMA CVD; VAPOR DEPOSITION;

BACK END OF LINES; DEPOSITION TEMPERATURES; FRONT END OF LINES; HIGH ASPECT RATIO; HIGH DENSITY PLASMAS; HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION; LOW DEPOSITION TEMPERATURE; VOID FORMATION;

ASPECT RATIO;

EID: 28844449036     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787106     Document Type: Conference Paper

References (4)

1. D.R. Cote, S.V. Nguyen, A.K. Stamper, D. Armbrust, D. Tobben, R. Conti, G.Y. Lee, "Plasma-Assisted Chemical Vapor Deposition of Dielectrics," unpublished.
2. R. Conti, L. Economikos, G.D. Papasouliotis, A. Knorr, and T.H. Ivers, "Processing Methods to Fill High Aspect Ratio Gaps without Premature Constriction" submitted to DUMIC99.
3. W.G.M. van den Hoek, J. Bondur, B. van Schravendijk, C. Roberts, C. Cunningham, Proc. DUMIC Conf., pp. 103-107, (1996)
4. W.G.M. van den Hoek and T.W. Mountsier, in Technical Proc. of the 1994 SEMI Technology Symposium (Chiba, Japan), pp. 195-200.