Study of quaternary GaInAsSb alloy by scanning transmission electron microscopy

Journal of Crystal Growth

Volumn 223, Issue 4, 2001, Pages 456-460

  Li, Shuwei ^a   Koike, Kazuto ^a   Schulze Kraasch, Folkert ^b   Kubalek, Erich ^b  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; GALLIUM ALLOYS; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); GALLIUM INDIUM ARSENIC ANTIMONIDE; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0035277360     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00616-9     Document Type: Article

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