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IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 102-105

Enhanced CW performance of the interband cascade laser using improved device fabrication

(5) Bradshaw, John L a,b Pham, J T a,b Yang, Rui Q a,b Bruno, J D b Wortman, D E b

a IEEE (United States)

b U S ARMY RESEARCH LABORATORY (United States)

Author keywords

Diode lasers; Mid infrared; Quantum well lasers; Semiconductor superlattices; Thermal factors

Indexed keywords

CONTINUOUS-WAVE OPERATION; DIFFERENTIAL EXTERNAL QUANTUM EFFICIENCY; INTERBAND CASCADE LASER; MID-INFRARED LASER; THRESHOLD CURRENT DENSITY;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HEAT RESISTANCE; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SUPERLATTICES;

QUANTUM WELL LASERS;

EID: 0035263918 PISSN: 1077260X EISSN: None Source Type: Journal
DOI: 10.1109/2944.954117 Document Type: Article

Times cited : (14)

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