Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma

Journal of Materials Research

Volumn 13, Issue 7, 1998, Pages 1765-1768

  Volz, K ^a   Ensinger, W ^a   Reiber, W ^a   Rauschenbach, B ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; FILM PREPARATION; ION IMPLANTATION; METHANE; MICROWAVES; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

MICROWAVE EXCITATION; MICROWAVE PLASMAS;

AMORPHOUS FILMS;

EID: 0032121581     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0248     Document Type: Article

References (7)

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