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Volumn 222, Issue 4, 2001, Pages 741-746

Application of Makyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTOR GROWTH; SURFACE TOPOGRAPHY; X RAY DIFFRACTION ANALYSIS;

EID: 0035251225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00992-1     Document Type: Article
Times cited : (2)

References (13)
  • 1
    • 85031525280 scopus 로고
    • Proceedings of the Fourth International Conference on Defect Recognition in Semiconductors Before and After Processing
    • (Eds.), (DRIP IV), 18-22 March Wilmslow, UK
    • M.R. Brozel, D.J. Stirland (Eds.), Proceedings of the Fourth International Conference on Defect Recognition in Semiconductors Before and After Processing (DRIP IV), 18-22 March 1991, Wilmslow, UK, Semicond. Sci. Technol. 7(1A) (1992) p. A80.
    • (1991) Semicond. Sci. Technol. , vol.7 , Issue.1 A
    • Brozel, M.R.1    Stirland, D.J.2
  • 12
    • 85031534905 scopus 로고    scopus 로고
    • Eighth International Conference on Defects Recognition, Imaging and Physics in Semiconductors
    • (DRIP VIII), 15-18 September Narita
    • F. Riesz, Eighth International Conference on Defects Recognition, Imaging and Physics in Semiconductors (DRIP VIII), 15-18 September 1999, Narita, Japan. J. Crystal Growth 210 (2000) 370.
    • (1999) Japan. J. Crystal Growth , vol.210 , pp. 370
    • Riesz, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.