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Volumn 222, Issue 4, 2001, Pages 741-746
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Application of Makyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
EPITAXIAL GROWTH;
MORPHOLOGY;
SEMICONDUCTOR GROWTH;
SURFACE TOPOGRAPHY;
X RAY DIFFRACTION ANALYSIS;
EPITAXIAL LATERAL OVERGROWTH;
MAKYOH TOPOGRAPHY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0035251225
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00992-1 Document Type: Article |
Times cited : (2)
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References (13)
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