Transferred-substrate HBTs with 254 GHz fτ

Electronics Letters

Volumn 35, Issue 7, 1999, Pages 605-606

  Mensa, D ^a   Lee, Q ^a   Guthrie, J ^a   Jaganathan, S ^a   Rodwell, M J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTATIONAL METHODS; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES;

CURRENT GAIN CUTOFF FREQUENCY; TRANSFERRED-SUBSTRATE PROCESS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032639303     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990398     Document Type: Article

References (6)

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2. SANO, E., YONEYAMA, M., YAMAHATA, S., and MATSUOKA, Y.: 'InP/ InGaAs double-heterojunction bipolar transistors for high-speed optical receivers', IEEE Trans., 1996, ED-43, (11), pp. 1826-1832
3. max of AlInAs/GaInAs HBTs on base sheet resistance', IEEE Electron Device. Lett., 1993, 14, (7), pp. 323-325
4. 1 xAs base in abrupt-emitter InP/InGaAs heterojunction bipolar transistors'. Jpn. J. Appl. Phys., 1995, 34, pp. 1221-1227
5. τ through doping profile selection in linearly graded heterojunction bipolar transistors', IEEE Trans., 1998, ED-43, (11), pp. 1826-1832
6. MENSA, D., LEE, Q., GUTHRIE, J., JAGANATHAN, S., and RODWELL, M.J.W.: Transferred-substrate HBTs with 250GHz current-gain cutoff frequency'. Tech. Dig. Int. Electron Device Meeting, 1998, pp. 657-660