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Volumn 45, Issue 8 PART 1, 1997, Pages 1252-1255

A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CURRENTS; MATHEMATICAL MODELS; MICROWAVE AMPLIFIERS; THERMAL EFFECTS;

EID: 0031210586     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.618416     Document Type: Article
Times cited : (21)

References (13)
  • 1
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    • Paggi, M.1    Williams, P.H.2    Borrego, J.M.3
  • 2
    • 84937657293 scopus 로고
    • Modeling of operating point nonlinear dependence of Ids characteristics from pulsed measurements in MESFET transistors
    • Madrid, Spain, Sept.
    • T. Fernandez, Y. Newport, J. M. Zamanillo, A. Tazon, and A. Mediavilla, "Modeling of operating point nonlinear dependence of Ids characteristics from pulsed measurements in MESFET transistors," in 23rd European Microwave Conf. Dig., Madrid, Spain, Sept. 1993, pp. 518-521.
    • (1993) 23rd European Microwave Conf. Dig. , pp. 518-521
    • Fernandez, T.1    Newport, Y.2    Zamanillo, J.M.3    Tazon, A.4    Mediavilla, A.5
  • 3
    • 84937654779 scopus 로고
    • Modeling of deviations between static and dynamic drain characteristics in GaAs FET's
    • Madrid, Spain, Sept.
    • F. Filicori, G. Vanni, A. Mediavilla, and A. Tazon, "Modeling of deviations between static and dynamic drain characteristics in GaAs FET's," in 23rd European Microwave Conf. Dig., Madrid, Spain, Sept. 1993, pp. 454-457.
    • (1993) 23rd European Microwave Conf. Dig. , pp. 454-457
    • Filicori, F.1    Vanni, G.2    Mediavilla, A.3    Tazon, A.4
  • 4
    • 0029513808 scopus 로고
    • Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's
    • Dec.
    • F. Filicori, G. Vanni, A. Santarelli, A. Mediavilla, A. Tazon, and Y. Newport, "Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2972-2981, Dec. 1995.
    • (1995) IEEE Trans. Microwave Theory Tech. , vol.43 , pp. 2972-2981
    • Filicori, F.1    Vanni, G.2    Santarelli, A.3    Mediavilla, A.4    Tazon, A.5    Newport, Y.6
  • 6
    • 0023984067 scopus 로고
    • Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies
    • P. H. Ladbrooke and S. R. Blight, "Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies," IEEE Trans. Electron Devices, vol. 35, pp. 257-267, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 257-267
    • Ladbrooke, P.H.1    Blight, S.R.2
  • 7
    • 0024735622 scopus 로고
    • Output conductance frequency dispersion and low-frequency noise in HEMT's and MESFET's
    • Sept.
    • J. A. Reynoso-Hernandez and J. Graffeuil, "Output conductance frequency dispersion and low-frequency noise in HEMT's and MESFET's," IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1478-1481, Sept. 1989.
    • (1989) IEEE Trans. Microwave Theory Tech. , vol.37 , pp. 1478-1481
    • Reynoso-Hernandez, J.A.1    Graffeuil, J.2
  • 9
    • 0025540179 scopus 로고
    • Modeling MESFET's for Intermodulation Analysis of Mixers and Amplifiers
    • Dec.
    • S. A. Mass and D. Neilson, "Modeling MESFET's for Intermodulation Analysis of Mixers and Amplifiers," IEEE Trans. Microwave Theory Tech., vol. 38, pp. 1964-1971, Dec. 1990.
    • (1990) IEEE Trans. Microwave Theory Tech. , vol.38 , pp. 1964-1971
    • Mass, S.A.1    Neilson, D.2
  • 10
    • 0003014485 scopus 로고
    • Modeling GaAs MESFET's for intermodulation analysis
    • May
    • _, "Modeling GaAs MESFET's for intermodulation analysis," Microwave J., pp. 295-300, May 1991.
    • (1991) Microwave J. , pp. 295-300
  • 11
    • 33747218292 scopus 로고
    • A novel non-linear GaAs FET model for intermodulation analysis in general purpose harmonic-balance simulators
    • Madrid, Spain, Sept.
    • J. C. Pedro and J. Perez, "A novel non-linear GaAs FET model for intermodulation analysis in general purpose harmonic-balance simulators," in 23rd European Microwave Conf. Dig., Madrid, Spain, Sept. 1993, pp. 714-716.
    • (1993) 23rd European Microwave Conf. Dig. , pp. 714-716
    • Pedro, J.C.1    Perez, J.2
  • 12
    • 0023961420 scopus 로고
    • GaAs MESFET modeling and nonlinear CAD
    • Feb.
    • W. R. Curtice, "GaAs MESFET modeling and nonlinear CAD," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 220-230, Feb. 1988.
    • (1988) IEEE Trans. Microwave Theory Tech. , vol.36 , pp. 220-230
    • Curtice, W.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.