Device modelling for the 1990s

Microelectronics Journal

Volumn 26, Issue 2-3, 1995, Pages 217-233

  Kosina, H ^a   Langer, E ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SIMULATION LANGUAGES; ELECTRIC CURRENTS; HIERARCHICAL SYSTEMS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT FLOW DESCRIPTION; HYDRODYNAMIC MODEL; SPHERICAL HARMONICS EXPANSION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029275569     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)98923-F     Document Type: Article

References (63)

1. Silicon-silicon dioxide field induced surface devices
2. MINIMOS 3: A MOSFET simulator that includes energy balance
3. Realistic device simulation in three dimensions
4. Three-dimensional numerical semiconductor device simulation: algorithms, architectures, results
5. A fast, general three-dimensional device simulator and its application in a submicron EPROM design study
6. Three dimensional process and device modeling
7. Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5
8. Transport equations for electrons in two-valley semiconductors
9. Two formulations of semiconductor transport equations
10. An investigation of steady-state velocity overshoot in silicon
11. Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices
12. An efficient technique for two-dimensional simulation of velocity overshoot effects in Si and GaAs devices
13. Simulation of submicrometer GaAS MESFET's using a full dynamic transport model
14. An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects
15. An efficient deterministic solution of the space-dependent Boltzmann transport equation for silicon
16. 2-dimensional solution to the Boltzmann transport equation to arbitrarily high-order accuracy
17. Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors
18. Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
19. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
20. PISCES-MC: A multiwindow, multimethod 2-D device simulator
21. A general purpose device-simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFET's
22. Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFET's
23. A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis
24. The hydrodynamic model of current transport in semiconductors
25. A self-consistent iterative scheme for one-dimensional steady state transistor calculations
26. Carrier mobilities in silicon empirically related to doping and field
27. The evolution of the MINIMOS mobility model
28. Drift and diffusion of charge carriers in silicon and their empirical relation to the electric field
29. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
30. Saturation values of the electron drift velocity in silicon between 300K and 4.2K
31. The physical behaviour of an n+p silicon solar cell in concentrated sunlight
32. Auger coefficients for highly doped and highly excited silicon
33. Ionization rates for electrons and holes in silicon
34. Temperature dependence of avalanche multiplication in semiconductors
35. Temperature dependence of carrier ionization rates and saturated velocities in silicon
36. Ionization coefficients in semiconductors: a nonlocalized property
37. Physical models for numerical device simulation
38. Evaluation of impact ionization modeling in the framework of hydrodynamic equations
39. Impact ionization within the hydrodynamic approach to semiconductor transport
40. A numerical implementation of the energy balance equations based on physical considerations
41. A new discretization strategy of the semiconductor equations comprising momentum and energy balance
42. Extension of the Scharfetter—Gummel algorithm to the energy balance equation
43. Hydrodynamic simulation of an n-MOSFET at 77K
44. The drift-diffusion equation and its applications in MOSFET modeling
45. The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors
46. Efficient coupling of Monte Carlo and drift diffusion method with applications to MOSFETs
47. Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo calculations
48. Self-consistent solution of the Boltzmann transport equation using the scattering matrix approach
49. A critical examination of the assumptions underlying macroscopic transport equations for silicon devices
50. The hot-electron problem in small semiconductor devices
51. Hydrodynamic equations for semiconductors with nonparabolic band structure
52. Quantum moment balance equations and resonant tunneling structures
53. The classical and quantum hydrodynamic models
54. Simulation of ultra-small GaAs MESFET using quantum moment equations
55. A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation
56. Device-grade ultra-shallow junctions fabricated with antimony
57. Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's
58. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
59. Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices