Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 297-299

  Ulyashin, A G ^a   Job, R ^a   Fahrner, W R ^a   Mudryi, A V ^b   Patuk, A I ^b   Shakin, I A ^b  

^a UNIVERSITY OF HAGEN   (Germany)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; HELIUM; HYDROGEN; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

POST-IMPLANTATION ANNEALING;

SEMICONDUCTING SILICON;

EID: 0035247259     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00115-3     Document Type: Article

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