In situ FT-IR reflective absorption spectroscopy for characterization of SiO 2 thin films deposited using sputtering-type electron cyclotron resonance microwave plasma

Applied Surface Science

Volumn 121-122, Issue , 1997, Pages 228-232

  Furukawa, Katsuhiko ^a   Liu, Yichun ^a   Gao, Dawei ^a   Nakashima, Hiroshi ^a   Uchino, Kiichiro ^a   Muraoka, Katsunori ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHONONS; PLASMA APPLICATIONS; REFRACTIVE INDEX; SILICA; SPUTTERING;

ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA; FOURIER TRANSFORM INFRARED REFLECTIVE ABSORPTION SPECTROSCOPY;

THIN FILMS;

EID: 18544408958     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00294-8     Document Type: Article

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