Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 178-180

  Abramov, A S ^a   Kosarev, A I ^a   Roca I Cabarrocas, P ^b   Shutov, M V ^a   Vinogradov, A J ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; HYDROGENATION; ION BOMBARDMENT; PHOTOCHEMICAL REACTIONS;

DEFECT CONCENTRATION;

AMORPHOUS SILICON;

EID: 0035246859     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01629-1     Document Type: Article

References (6)

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3. Kosarev A.I., Smirnov A.S., Abramov A.S., Vinogradov A.J., Ustavschikov A.Y., Shutov M.V. J. Vac. Sci. Technol. A. 15:1997;298.
4. Abramov A.S., Vinogradov A.Y., Kosarev A.I., Shutov M.V. Techn. Phys. 43:(2):1998;180-187.
5. Hammers E.A.G., van Sark W.G.J.H.M., Bezemer J., Meiling H., van der Weg W.F. Non-Cryst. Solids. 226:1998;205-216.
6. Will S., Mell H., Poschenrieder M., Fuhs W. J. Non-Cryst. Solids. 227-230:1998;29.