Amorphous silicon and tungsten etching employing environmentally benign plasma process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 832-836

  Fujita, Kazushi ^a   Kobayashi, Shigeto ^a   Ito, Masafumi ^b   Hori, Masaru ^a   Goto, Toshio ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b WAKAYAMA UNIVERSITY   (Japan)

Author keywords

Amorphous silicon tungsten; Chamber cleaning; CO2 laser; Etching; Fluorinated ethylene propylene; Global warming

Indexed keywords

AMORPHOUS SILICON; ATOMS; CARBON DIOXIDE LASERS; CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; FLUOROCARBONS; GLOBAL WARMING; OXYGEN; TEMPERATURE; TUNGSTEN;

CARBON DIOXIDE LASER EVAPORATION; CHEMICAL VAPOR DEPOSITION CHAMBER CLEANING; FLUORINATED ETHYLENE PROPYLENE; RADICAL DENSITIES; SOLID MATERIAL EVAPORATION SYSTEM;

PLASMA APPLICATIONS;

EID: 0035246305     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.832     Document Type: Article

References (16)