Optimization of fabrication process for dual trench type alternating-PSM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue 1, 2001, Pages 125-131

  Komizo, Tohru ^a   Kagami, Ichiro ^a   Kakuta, Daichi ^a   Kawahira, Hiroich ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Alternating PSM; Phase control; Phase uniformity; Quartz etching

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; INERT GASES; PHASE CONTROL; PHASE DIAGRAMS; PHOTORESISTS; QUARTZ; SEMICONDUCTOR DEVICE MANUFACTURE;

DUAL TRENCH STRUCTURE; MASK ERROR ENHANCEMENT FACTOR; PHASE SHIFT MASK; PHASE UNIFORMITY;

MASKS;

EID: 0035191812     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.438341     Document Type: Article

References (13)

1. Improved resolution in photolithography with a phase shifting mask
2. Wavefront enjineering from 500 nm to 100 nm CD
3. Application of alternating phase-shifting mask to 0.16 um CMOS logic gate patterns
4. Lithography computer aided design technology for embedded memory in logic
5. Automatic alternative phase shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 um
6. The application of alternating phase-shifting masks to 140 nm gate patterning (II): Mask design and manufacturing tolerances
7. Practicing extension of 248 DUV optical lithography using trim-mask PSM
8. Effects of phase shift masks on across field linewidth control
9. Alternating phase shifted mask for logic gate levels, design and mask manufacturing
10. Pattern dependence of mask topography effect in alternating phase-shifting masks
11. Phase phirst! An improved strong-PSM paradigm
12. Technological challenges in implementation of alternating phase shift mask
13. New optimization method of the exposure with alternative phase shifting masks