Study of reticle cleaning process for 130nm lithography and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue 1, 2001, Pages 430-437

  Handa, Hitoshi ^a   Takahashi, Masumi ^a   Shirai, Hisatsugu ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

ArF lithography; DUV; Electrolyzed water; Opt chemical contamination; Reticle cleaning

Indexed keywords

CHROMIUM COMPOUNDS; CLEANING; ELECTROLYSIS; ELECTROSTATICS; INSPECTION; NITROGEN COMPOUNDS; PHOTOCHEMICAL REACTIONS; REMOVAL; ULTRAVIOLET RADIATION; WETTING;

ARGON FLUORINE LITHOGRAPHY; CHEMICAL RESIDUE; CHROME OXIDE; ELECTROLYZED WATER; RETICLE CLEANING; WET CLEANING;

LITHOGRAPHY;

EID: 0035190748     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.438393     Document Type: Article

References (5)

1. The knack for reticle cleaning
2. Formation and detection of sub-pellicle defects by exposure to DUV system illumination
3. High performance photomask cleaning process using electrolyzed water
4. ArF half-tone PSM cleaning process optimization for next-generation lithography
5. Cleaning technology of PSM for under quarter-micron devices