Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn 2, Issue , 2001, Pages 71-75

  Ruzyllo, J ^a   Lee, D O ^a   Roman, P ^a   Horn, M ^a   Mumbauer, P ^b   Brubaker, M ^b   Grant, R ^b  

^a The Pennsylvania State University   (United States)

^b Primaxx Inc   (United States)

Author keywords

Equivalent oxide thickness; Gate oxide; High k dielectrics; Liquid Source Misted Chemical Deposition (LSMCD)

Indexed keywords

DEPOSITION; GATES (TRANSISTOR); MOS DEVICES; PERMITTIVITY; THERMODYNAMIC STABILITY;

LIQUID SOURCE MISTED CHEMICAL DEPOSITION (LSMCD);

DIELECTRIC MATERIALS;

EID: 0035182661     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ASMC.2001.925619     Document Type: Article

References (11)

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