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Volumn , Issue , 2000, Pages 511-519

Local Electrical Thickness-mapping of Thin Oxides with Conducting Atomic Force Microscopy

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; DEFECTS; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; FAILURE ANALYSIS; LEAKAGE CURRENTS; QUANTUM THEORY; SPECTROSCOPIC ANALYSIS; THICKNESS MEASUREMENT;

EID: 1542330705     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (9)

References (12)
  • 7
    • 1542284036 scopus 로고    scopus 로고
    • Digital Instruments, Vecco Metrology Group, 112 Robin Hill Road, Santa Barbara, CA 93103, USA
    • Digital Instruments, Vecco Metrology Group, 112 Robin Hill Road, Santa Barbara, CA 93103, USA, http://www.di.com
  • 9
    • 1542284032 scopus 로고    scopus 로고
    • Kindly supplied by Ph. Niedermann, CSEM, Neuchatel, Switzerland
    • Kindly supplied by Ph. Niedermann, CSEM, Neuchatel, Switzerland
  • 12
    • 0003514833 scopus 로고    scopus 로고
    • edited by G. Barbottin, A. Vapaille, Elsevier Sci. Publ. B.V., North Holland
    • D. Wolters, J. Verwey, in Instabilities in silicon devices, edited by G. Barbottin, A. Vapaille, Elsevier Sci. Publ. B.V., North Holland, (1996)
    • (1996) Instabilities in Silicon Devices
    • Wolters, D.1    Verwey, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.