Effect of microstructure on electromigration kinetics in Cu lines

Journal of Physics D: Applied Physics

Volumn 31, Issue 14, 1998, Pages 1626-1629

  Gladkikh, A ^a   Karpovski, M ^a   Palevski, A ^a   Kaganovskii, Yu S ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b BAR ILAN UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIFFUSION; INTEGRATED CIRCUITS; MICROSTRUCTURE;

VOID GROWTH;

ELECTROMIGRATION;

EID: 0032118601     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/14/003     Document Type: Article

References (37)

1. Pai P-L and Ting CH 1989 IEEE Electron Dev. Lett. 10 423
2. Masu K, Hiura Y, Tsubouchi K, Ohmi T and Mikoshiba N 1991 Japan. J. Appl. Phys. 30 3642
3. Rodbell K P and Koch RH 1991 Phys. Rev. B 44 1767
4. Park C W and Vook R W 1991 Appl. Phys. Lett. 59 175
5. Kang H-K, Cho J S H and Wong S S 1992 IEEE Electron Dev. Lett. 13 448
6. Nitta T, Ohmi T, Takewaki T and Shibata T 1992 J. Electrochem. Soc. 139 922
7. Ohmi T and Tsubouchi K 1992 Solid State Tech. 35 47
8. Hu C-K, Small M B and Ho P S 1992 Mater. Res. Soc. Symp. Proc. 265 171
9. Nitta T, Ohmi T, Hoshi T, Sakai S, Sakaibara K, Imai S and Shibata T 1993 J. Electrochem. Soc. 140 1131
10. Tao J, Cheung N W and Hu C 1993 IEEE Electron Device Lett. 14 249
11. Park C W and Vook R W 1993 Thin Solid Films 226 238
12. Lee K L, Hu C-K and Tu K N 1995 J. Appl. Phys. 78 4428
13. Jo B H and Vook R W 1995 Appl. Surf. Sci. 89 237
14. Hu C-K and Luther B 1995 Mater. Chem. Phys. 41 1
15. Jo B H and Vook RW 1995 Thin Solid Films 262 129
16. Hu C-K, Luther B, Kaufman F B, Hummel J, Uzoh C and Pearson D J 1995 Thin Solid Films 262 84
17. Fukada T, Mori T, Toyoda Y, Hasegava M, Namba K and Ogata K 1995 Appl. Surf. Sci. 91 227
18. Lloyd J R and Clement J J 1995 Thin Solid Films 262 135
19. Furuya A, Hosoi N, Koayama K, Ohshita Y and Numasawa Y 1996 IEEE Trans. Electron. Dev. 43 2302
20. Braud F, Tartavel G, Palleau J, Torres J, Persico A and Reimbold G 1996 Quality and Reliability Eng. Int. 12 305
21. Frankovic R and Bernstein GH 1996 IEEE Trans. Elec. Dev. 43 2233
22. Gladkikh A, Lereah Y, Karpovski M, Palevski A and Kaganovskii Yu S 1996 Mater. Res. Soc. Symp. Proc. 428 55
23. Thompson C V and Cho J 1986 IEEE Electron Device Lett. 7 667
24. Rosenberg R and Ohring M 1971 J. Appl. Phys. 42 5671
25. Glickman E and Nathan M 1996 J. Appl. Phys. 80 3782
26. Rosenberg R and Berenbaum L 1968 Appl. Phys. Lett. 12 201
27. Chopra K L 1967 Thin Film Phenomena (New York: McGraw-Hill)
28. Glickman E E and Klinger LM 1995 Mater. Res. Soc. Symp. Proc. 391 243
29. Klinger L M, Glickman E E, Fradkov V E, Mullins W W and Bauer C L 1995 Mater. Res. Soc. Symp. Proc. 391 295
30. Klinger L M, Glickman E E, Fradkov V E, Mullins W W and Bauer C L 1995 J. Appl. Phys. 78 3833
31. Blech I A and Kinsbron E 1975 Thin Solid Films 25 327
32. Flinn P A 1991 J. Mater. Res. 6 1498
33. Langelaan G, Saimoto S and Moske M 1996 Mater. Res. Soc. Symp. Proc. 428 537
34. Palatnik L S, Fuks M Ya and Kosevich VM 1973 Formation Mechanism and Substructure of Condensed Films (Moscow: Nauka) in Russian
35. Zeyfang R 1971 Solid State Electronics 14 1035
36. Hirth J P and Lothe J 1969 Theory of Dislocations (New York: McGraw-Hill)
37. Black JR 1969 IEEE Trans. Electron. Devices 16 338