Spectral sensitivity enhancement by thin film of β-FeSi2-Si composite prepared by RF-sputtering deposition

Thin Solid Films

Volumn 381, Issue 2, 2001, Pages 267-275

  Okajima, K ^a   Yamatsugu, H ^b   Wen, C ^b   Sudoh, M ^a   Yamada, K ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; PHOTOCURRENTS; PHOTOSENSITIVITY; PHOTOVOLTAIC CELLS; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS;

PHOTO-GENERATED CARRIERS; QUANTUM SIZE EFFECTS;

SEMICONDUCTING FILMS;

EID: 0035151943     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01755-7     Document Type: Article

References (28)

1. J.L. Stone, Technical Digest of the International PVSEC-7 (1993) 7.
2. Bost M.C., Mahan J.E. J. Appl. Phys. 64:1988;2034.
3. Dimitriadis C.A., Werner J.H., Logothidis S., Stutzmann M., Weber J., Nesper R. J. Appl. Phys. 68:1990;1726.
4. Lefki K., Muret P., Cherif N., Cinti R.C. J. Appl. Phys. 69:1991;352.
5. Powalla M., Herz K. Appl. Surf. Sci. 65/66:1993;482.
6. M. Líbenzný, J. Poortmans, T. Vermeulen, J. Nijs, P.H. Amesz, K. Herz, M. Powalla, G.U. Einsperger, M. Schmidt, V. Hoffmann, H. Lange, Proc. 13th European Photovoltaic Solar Energy Conf., H. S. Stephens & Associates, France, 1995, p. 1326.
7. Miki T., Matsui Y., Teraoka Y., Ebina T., Matsubara K., Kishimoto K. J. Appl. Phys. 76:1994;2097.
8. Dusausoy P.Y., Protas J., Wandji R., Roques B. Acta Crystallogr. B27:1971;1209.
9. Watanabe T., Hasaka M., Miyase T. J. Jpn. Inst. Metals. 58:1994;353.
10. Oostra D.J., Bulle-Liuwma C.W.T., Vandenhoudt D.E.W., Felten F., Jans J.C. J. Appl. Phys. 74:1993;4347.
11. Bost M.C., Mahan J.E. J. Appl. Phys. 58:1985;2969.
12. Erlesand U., Östling M. Solid-State Electron. 38:1995;1143.
13. Barnham K.W.J., Duggan G. J. Appl. Phys. 67:1990;3490.
14. Nelson J., Paxman M., Barnham K.W.J., Roberts J.S., Button C. IEEE J. Quantum Electron. 29:1993;1460.
15. Thucydides G., Barnes J.M., Tsui E., Barnham K.W.J., Phillips C.C., Cheng T.S., Foxon C.T. Semicond. Sci. Technol. 12:1997;35.
16. Komabayashi M., Hijikata K., Ido S. Jpn. J. Appl. Phys. 29:1990;1118.
17. Pankove J.I. Holongak J.N. Optical Process in Semiconductors. 1975;36 Dover, New York.
18. Christensen N.E. Phys. Rev. 42:1990;7148.
19. Fowler R. Phys. Rev. 38:1931;45.
20. Kane E.O. Phys. Rev. 127:1962;131.
21. Chen I.S., Jackson T.N., Wronski C.R. J. Appl. Phys. 79:1996;8470.
22. Lefki K., Muret P. Appl. Surf. Sci. 65/66:1993;772.
23. Okajima K., Wen C., Ihara M., Sakata I., Yamada K. Jpn. J. Appl. Phys. 38:1998;781.
24. Muret P., Lefki K., Nguyen T.T.A., Cola A., Ali I. Semicond. Sci. Technol. 9:1994;1395.
25. Okajima K., Wen C., Kato K., Sakata I., Yamada K. Electrochemistry. 67:1998;248. in Japanese.
26. Essick J.M., Nobel Z. Phys. Rev. B. 54:1996;4885.
27. Mimura H., Hatanaka Y. Appl. Phys. Lett. 50:1987;326.
28. Matsuura H., Okuno T., Okushi H., Tanaka K. J. Appl. Phys. 55:1984;1012.