Tailored carrier escape rates in GaAs/Al0.3Ga0.7As asymmetric double quantum wells

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 35-41

  Thucydides, G ^a   Barnes, J M ^a   Tsui, E ^a   Barnham, K W J ^a   Phillips, C C ^a   Cheng, T S ^b   Foxon, C T ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; MODULATORS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SOLAR CELLS; THERMAL EFFECTS;

ASYMMETRIC DOUBLE QUANTUM WELLS; CONTINUOUS WAVE PHOTOLUMINESCENCE MEASUREMENT; PHOTOCURRENT MEASUREMENT; RESONANT HOLE TUNNELLING; THERMIONIC EMISSION; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030673747     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/007     Document Type: Article

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