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Volumn 222, Issue 1-2, 2001, Pages 170-182

Theoretical approach to the single-source precursor concept: Quantum chemical modeling of gas-phase reactions

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DISSOCIATION; ENTHALPY; HYDROGEN; MATHEMATICAL MODELS; NITRIDES; QUANTUM THEORY; STOICHIOMETRY;

EID: 0035148690     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00903-9     Document Type: Article
Times cited : (30)

References (54)
  • 39
    • 85031524259 scopus 로고    scopus 로고
    • Modeling of chemical vapor deposition of GaN from organogallium precursors
    • submitted for publication
    • A.Y. Timoshkin, H.F. Bettinger, H.F. Schaefer, Modeling of chemical vapor deposition of GaN from organogallium precursors, Parts 1 and 2, J. Phys. Chem. submitted for publication.
    • J. Phys. Chem. , Issue.1-2 PART
    • Timoshkin, A.Y.1    Bettinger, H.F.2    Schaefer, H.F.3
  • 40
    • 85031525743 scopus 로고    scopus 로고
    • Saarland University, Saarbrücken, Germany, July Article submitted to the special issue of Phosphorus, Sulfur, Silicon, and Related elements
    • A.Y. Timoshkin, Abstracts of the Ninth International Conference on Inorganic Ring Systems, Saarland University, Saarbrücken, Germany, July 2000, pp. O-51. Article submitted to the special issue of Phosphorus, Sulfur, Silicon, and Related elements.
    • (2000) Abstracts of the Ninth International Conference on Inorganic Ring Systems
    • Timoshkin, A.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.