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Volumn 426, Issue 1, 1999, Pages

Ion beam technique for real-time measurement of two-dimensional islands during epitaxial growth

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; ION BEAMS; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTOR GROWTH;

EID: 0032681743     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00254-X     Document Type: Article
Times cited : (6)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.