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Volumn 426, Issue 1, 1999, Pages
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Ion beam technique for real-time measurement of two-dimensional islands during epitaxial growth
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL ORIENTATION;
DIFFUSION IN SOLIDS;
ION BEAMS;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
SEMICONDUCTOR GROWTH;
ADATOMS;
ION CURRENT;
ION SCATTERING;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0032681743
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(99)00254-X Document Type: Article |
Times cited : (6)
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References (21)
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