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Volumn 70, Issue 21, 1997, Pages 2843-2845
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In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ELECTRIC CURRENT MEASUREMENT;
HELIUM;
ION BEAMS;
MONOLAYERS;
OSCILLATIONS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GALLIUM ARSENIDE;
THERMAL EFFECTS;
ADATOMS;
ION SCATTERING;
MOLECULAR BEAM EPITAXY;
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EID: 0031142099
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.119020 Document Type: Article |
Times cited : (10)
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References (15)
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