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Volumn 70, Issue 21, 1997, Pages 2843-2845

In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; HELIUM; ION BEAMS; MONOLAYERS; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

EID: 0031142099     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119020     Document Type: Article
Times cited : (10)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.