Experimental and theoretical study of the growth of GaN on sapphire by HVPE

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 425-428

  Trassoudaine, A ^a   Aujol, E ^a   Disseix, P ^a   Castelluci, D ^a   Cadoret, R ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROCHLORIC ACID; MATHEMATICAL MODELS; QUARTZ; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDES; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221270     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<425::AID-PSSA425>3.0.CO;2-Q     Document Type: Article

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