Effect of silicon surface termination on copper deposition in deionized water

Journal of the Electrochemical Society

Volumn 148, Issue 1, 2001, Pages

  Lim, Sang Woo ^a,b   Mo, Renée T ^a   Pianetta, Piero A ^a   Chidsey, Christopher E D ^a  

^a Department of Electrical Engineering ^*

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; COPPER; DENSITY (SPECIFIC GRAVITY); DEPOSITION; NUCLEATION; SILANES; SURFACE ROUGHNESS; WATER;

DEIONIZED WATER;

SILICON WAFERS;

EID: 0035119904     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1344534     Document Type: Article

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