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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 225-228

Dielectric constant stability and thermal stability of Cu/Ta/SiOF/Si multilayer films

(4) Lee, Seoghyeong a Yang, Sung Hoon b Moon, Hee Soo b Park, Jong Wan b

a SAMSUNG Electronics (South Korea)

b Hanyang University (South Korea)

Author keywords

Cu Ta SiOF Si multilayer; Dielectric constant stability; ECRCVD; Plasma treatment; SiOF; Thermal stability

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRODEPOSITION; ELECTRON CYCLOTRON RESONANCE; FLUORINE; MULTILAYERS; PERMITTIVITY; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION (ECRCVD); THERMAL DESORPTION SPECTROSCOPY (TDS);

SEMICONDUCTING FILMS;

EID: 0035063987 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.40.225 Document Type: Article

Times cited : (2)

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